HN4K03JU_07 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
Test Condition
I_GSS
V _{(BR) DSS}
I_DSS
V_th
| Y_fs |
R_{DS (ON)}
C_iss
C_rss
C_oss
t_on
t_off
V_GS = 10V, V_DS = 0
I_D = 100μA, V_GS = 0
V_DS = 20V, V_GS = 0
V_DS = 3V, I_D = 0.1mA
V_DS = 3V, I_D = 10mA
I_D = 10mA, V_GS = 2.5V
V_DS = 3V, V_GS = 0, f = 1MH_z
V_DS = 3V, V_GS = 0, f = 1MH_z
V_DS = 3V, V_GS = 0, f = 1MH_z
V_DD = 3V, I_D = 10mA
V_GS = 0~2.5V
V_DD = 3V, I_D = 10mA
V_GS = 0~2.5V
Equivalent Circuit (Top View)
Marking
HN4K03JU
Min. Typ. Max. Unit
―
―
1
μA
20
―
―
V
―
―
1
μA
0.5
―
1.5
V
25
50
―
mS
―
8
12
Ω
―
8.5
―
pF
―
3.3
―
pF
―
9.3
―
pF
― 0.16 ―
μs
― 0.15 ―
2
2007-11-01