HN4K03JU_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN4K03JU
HN4K03JU
High Speed Switching Applications
Analog Switch Applications
Unit in mm
z High input impedance
z Low gate threshold voltage: V_th = 0.5~1.5V
z Excellent switching times
z Small package
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
DC Drain current
Drain power dissipation
Channel temperature
Storage temperature range
V_DS
V_GSS
I_D
P_D*
T_ch
T_stg
20
V
10
V
100
mA
JEDEC
―
200
mW
EIAJ
―
150
°C
TOSHIBA
2-2L1B
−55~150
°C
Weight: 6.2mg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
1
2007-11-01