HN2E02F Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Super High Speed Switching Application

HN2E02F
Q1 (Diode) Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
t_rr
― I_F = 1mA
― I_F = 10mA
― I_F = 100mA
― V_R = 30V
― V_R = 80V
― V_R = 0, f = 1MHz
― I_F = 10mA (fig.1)
Q2 (Transistor) Electrical Characteristics (Ta = 25°C)
Min Typ. Max Unit
― 0.62 ―
― 0.75 ―
V
― 0.98 1.2
―
―
0.1
μA
―
―
0.5
―
0.5
―
pF
―
1.6
―
ns
Characteristic
Symbol
Test
Circuit
Test Condition
Min Typ. Max Unit
Collector cut-off current
I_CBO
― V_CB = 60V, I_E = 0
―
―
100 nA
Emitter cut-off current
DC current gain
I_EBO
h_FE*
― V_EB = 5V, I_C = 0
― V_CE = 6V, I_C = 2mA
―
―
100 nA
120
―
700
Collector-emitter saturation voltage
Transition Frequency
V_CE(sat)
f_T
― I_C =100mA, I_B =10mA
― V_CE = 10V, I_C =10mA
―
0.1 0.25 V
60
―
― MHz
Collector Output Capacitance
C_ob
― V_CB = 10V, I_E = 0,f=1MHz
―
2.0
―
pF
* h_FE Rank Y(Y) : 120~240, GR(G) : 200~400,BL(L) : 350~700
( ) Marking Symbol
Marking
Type Name
h_{FE Rank}
Equivalent Circuit (Top View)
65 4
65
Q2
13Y
Q1
1_{1 2} 3
Fig. 1 : Reverse Recovery Time (t_rr) Test Circuit
2
2007-11-22