HN2E02F Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Super High Speed Switching Application

TOSHIBA MULTI CHIP DISCRETE DEVICE
HN2E02F
HN2E02F
Super High Speed Switching Application
Audio Frequency Amplifier Application
AM Amplifier Application
Q1
Low Forward Voltage Drop
Fast Reverse Recovery Time
Low Total Capacitance
Q2
:V_F(3)=0.98V(typ.)
:t_rr=1.6ns(typ.)
:C_T=0.5pF(typ.)
High Voltage
:V_CEO=50V
High Collector Current
:I_C=150mA(max.)
Good h_{FE Linearity}
:h_FE(I_C=0.1mA)/ h_FE(I_C=2mA) =0.95
Unit: mm
Q1 (Diode)
Q2 (Transistor)
: 1SS352 Equivalent
: 2SC4738 Equivalent
Q1 (Diode) Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
V_RM
V_R
I_FM
I_O
I_FSM
85
V
80
V
300
mA
100
mA
1
A
Q2 (Transistor) Absolute Maximum Ratings (Ta = 25°C)
1.Anode
2.Base
3.Collector
4.Emitter
5.NC
6.Cathode
JEDEC
―
JEITA
―
TOSHIBA
2-3N1D
Weight: 0.015g (typ.)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
V_CBO
V_CEO
V_EBO
I_C
I_B
60
V
50
V
5
V
150
mA
30
mA
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
P_C*
300
mW
T_j
125
°C
T_stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*Total rating: Power dissipation per element should not exceed 200mW per element.
1
2007-11-22