HN2E01F_07 Datasheet, PDF (2/7 Pages) Toshiba Semiconductor – MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application

Q1 (Diode) Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
t_rr
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 10mA
― I_F = 100mA
― V_R = 30V
― V_R = 80V
― V_R = 0, f = 1MHz
― I_F = 10mA (fig.1)
HN2E01F
Min Typ. Max Unit
― 0.62 ―
― 0.75 ―
V
― 0.98 1.2
―
―
0.1
μA
―
―
0.5
―
0.5
―
pF
―
1.6
―
ns
Q2 (Transistor) Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Collector cut-off current
I_CBO
Emitter cut-off current
DC current gain
I_EBO
h_FE*
Collector-emitter saturation voltage
V_CE(sat)
Transition frequency
f_T
Collector output capacitance
C_ob
* h_FE Rank A : 600~1800, B : 1200~3600
Marking
Test
Circuit
Test Condition
― V_CB = 50V, I_E = 0
― V_EB = 5V, I_C = 0
― V_CE = 6V, I_C = 2mA
― I_C =100mA, I_B =10mA
― V_CE = 10V, I_C =10mA
― V_CB = 10V, I_E = 0,f=1MHz
Min Typ. Max Unit
―
―
100 nA
―
―
100 nA
600 ― 3600
― 0.12 0.25 V
―
250
― MHz
―
3.5
―
pF
Equivalent Circuit (Top View)
Type Name
h_FE Rank
12A
6
6
5₅
4
Q2
Q1
1₁ 2 3
Fig. 1 : Reverse Recovery Time (t_rr) Test Circuit
2
2007-11-22