HN2D01FU Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – Silicon Epitaxial Planar Type Ultra High Speed Switching Application

Electrical Characteristics (Q1 Q2 Q3 Common, Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
trr
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 10mA
― I_F = 100mA
― V_R = 30V
― V_R = 80V
― V_R = 0, f = 1MH_z
― I_F = 10mA (Fig.1)
Fig.1 Reverse Recovery Time (t_rr) Test Circuit
HN2D01FU
Min Typ. Max Unit
― 0.62 ―
― 0.75 ―
V
― 0.98 1.20
―
―
0.1
μA
―
―
0.5
―
0.5
3.0
pF
―
1.6
4.0
ns
2
2007-11-01