HN2D01FU Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon Epitaxial Planar Type Ultra High Speed Switching Application

TOSHIBA Diode Silicon Epitaxial Planar Type
HN2D01FU
Ultra High Speed Switching Application
z HN2D01FU is composed of 3 independent diodes.
z Low forward voltage
: V_{F (3)} = 0.98V (typ.)
z Fast reverse recovery time : t_rr = 1.6ns (typ.)
z Small total capacitance : C_T = 0.5pF (typ.)
Pin Assignment (Top View)
Marking
HN2D01FU
Unit in mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
JEDEC
EIAJ
TOSHIBA
Weight: 6.2mg
Unit
―
―
1-2T1C
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
V_RM
V_R
I_FM
I_O
I_FSM
P
T_j
T_stg
85
V
80
V
240 *
mA
80 *
mA
1*
A
200
mW
125
°C
−55∼125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: This is absolute maximum rating of single diode (Q1 or Q2 or Q3). In the case of using 2 ro 3 diodes, the
absolute maximum ratings per diodes is 75 % of the single diode one.
1
2007-11-01