HN1L02FU_07 Datasheet, PDF (2/7 Pages) Toshiba Semiconductor – Silicon N·P Channel MOS Type High Speed Switching Applications

Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain-Source breakdown
voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
Test Condition
I_GSS V_GS = 10V, V_DS = 0
V _{(BR) DSS} I_D = 100μA, V_GS = 0
I_DSS V_DS = 20V, V_GS = 0
V_th
V_DS = 3V, I_D = 0.1mA
|Y_fs|
V_DS = 3V, I_D = 10mA
R_{DS (ON)} I_D = 10mA, V_GS = 2.5V
C_iss
V_DS = 3V, V_GS = 0,
f = 1MHz
C_rss
V_DS = 3V, V_GS = 0,
f = 1MHz
C_oss
V_DS = 3V, V_GS = 0,
f = 1MHz
t_on
V_DD = 3V, I_D = 10mA,
V_GS = 0~2.5V
t_off
V_DD = 3V, I_D = 10mA,
V_GS = 0~2.5V
Q2 Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain-Source breakdown
voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
Test Condition
I_GSS V_GS = −7V, V_DS = 0
V _{(BR) DSS} I_D = −100μA, V_GS = 0
I_DSS V_DS = −20V, V_GS = 0
V_th
|Y_fs|
R_{DS (ON)}
C_iss
V_DS = −3V, I_D = −0.1mA
V_DS = −3V, I_D = −10mA
I_D = −10mA, V_GS = −2.5V
V_DS = −3V, V_GS = 0,
f = 1MHz
C_rss
V_DS = −3V, V_GS = 0,
f = 1MHz
C_oss
V_DS = −3V, V_GS = 0,
f = 1MHz
t_on
V_DD = −3V, I_D = −10mA,
V_GS = 0~−2.5V
t_off
V_DD = −3V, I_D = −10mA,
V_GS = 0~−2.5V
HN1L02FU
Min Typ. Max Unit
―
―
1
μA
20
―
―
V
―
―
1
μA
0.5
―
1.5
V
20
―
― mS
―
20
40
Ω
―
5.5
―
pF
―
1.6
―
pF
―
6.5
―
pF
― 0.14 ―
μs
― 0.14 ―
μs
Min Typ. Max Unit
―
―
−1 μA
−20 ―
―
V
―
―
−1
μA
−0.5 ― −1.5 V
15
―
― mS
―
20
40
Ω
― 10.4 ―
pF
―
2.8
―
pF
―
8.4
―
pF
― 0.15 ―
μs
― 0.13 ―
μs
2
2007-11-01