HN1L02FU_07 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Silicon N·P Channel MOS Type High Speed Switching Applications

TOSHIBA Field Effect Transistor Silicon N·P Channel MOS Type
HN1L02FU
High Speed Switching Applications
Analog Switch Applications
HN1L02FU
Unit in mm
Q1, Q2 common
z 2.5V gate drive
z Low threshold voltage
Q1: Vth = 0.5~1.5V
z High speed
z Small package
Q2: Vth =−0.5~−1.5V
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-Source voltage
Gate-Source voltage
Drain current
Symbol
V_DS
V_GSS
I_D
Rating
20
10
50
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-Source voltage
Gate-Source voltage
Drain current
Symbol
V_DS
V_GSS
I_D
Rating
−20
−7
−50
Unit
V
V
mA
JEDEC
―
EIAJ
―
TOSHIBA
2-2J1C
Unit
Weight: 6.8mg
V
Marking
V
mA
Absolute Maximum Ratings (Q1, Q2 Common) (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain power dissipation
Channel temperature
Storage temperature range
P_D*
200
mW
T_ch
150
°C
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
*
Total rating
Equivalent Circuit
(Top View)
1
2007-11-01