HN1J02FU_07 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Silicon P Channel Mos Type High Speed Switching Applications

HN1J02FU
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Gate leakage current
Drain-source breakdown
voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
I_GSS
Test
Circuit
―
Test Condition
V_GS = −7V, V_DS = 0
V _{(BR) DSS}
― I_D = −100μA, V_GS = 0
I_DSS
V_th
|Y_fs|
R_{DS (ON)}
C_iss
C_rss
C_oss
t_on
t_off
― V_DS = −20V, V_GS = 0
― V_DS = −3V, I_D = −0.1mA
― V_DS = −3V, I_D = −10mA
― I_D = −10mA, V_GS = −2.5V
―
V_DS = −3V, V_GS = 0,
f = 1MHz
―
V_DS = −3V, V_GS = 0,
f = 1MHz
―
V_DS = −3V, V_GS = 0,
f = 1MHz
―
V_DD = −3V, I_D = −10mA,
V_GS = 0~−2.5V
―
V_DD = −3V, I_D = −10mA,
V_GS = 0~−2.5V
Min Typ. Max Unit
―
―
−1 μA
−20 ―
―
V
―
―
−1 μA
−0.5 ― −1.5 V
15
―
― mS
―
20
40
Ω
― 10.4 ―
pF
―
2.8
―
pF
―
8.4
―
pF
― 0.15 ―
μs
― 0.13 ―
μs
Equivalent Circuit (Top View)
Marking
2
2007-11-01