HN1J02FU_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon P Channel Mos Type High Speed Switching Applications

TOSHIBA Field Effect Transistor Silicon P Channel Mos Type
HN1J02FU
High Speed Switching Applications
Analog Switch Applications
HN1J02FU
Unit in mm
z High input impedance
z Low threshold voltage: Vth =−0.5V~−1.5V
z High speed
z Small package
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
V_DS
V_GSS
I_D
P_D*
T_ch
T_stg
−20
V
−7
V
−50
mA
200
mW
JEDEC
―
EIAJ
150
°C
TOSHIBA
―
2-2J1C
−55~150
°C
Weight: 6.8mg
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*
Total rating
1
2007-11-01