HN1D03FU_07 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Silicon Epitaxial Planar Type Ultra High Speed Switching Application

Fig.1 Reverse Recovery Time (t_rr) Test Circuit
HN1D03FU
Unit 1 Electrical Characteristics (Q1, Q2, Common) (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
t_rr
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 10mA
― I_F = 100mA
― V_R = 30V
― V_R = 80V
― V_R = 0, f = 1MHz
― I_F =10mA (fig.1)
Unit 2 Electrical Characteristics (Q3, Q4, Common) (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
t_rr
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 10mA
― I_F = 100mA
― V_R = 30V
― V_R = 80V
― V_R = 0, f = 1MHz
― I_F =10mA (fig.1)
Min Typ. Max Unit
― 0.60 ―
― 0.72 ―
V
― 0.90 1.20
―
― 0.10
μA
―
― 0.50
―
0.9
3.0 pF
―
1.6
4.0
ns
Min Typ. Max Unit
― 0.61 ―
― 0.74 ―
V
― 0.92 1.20
―
― 0.10
μA
―
― 0.50
― 2.20 4.0 pF
―
1.60 4.0
ns
2
2007-11-01