HN1D03FU_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon Epitaxial Planar Type Ultra High Speed Switching Application

TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D03FU
Ultra High Speed Switching Application
HN1D03FU
Unit: mm
z Built in anode common and cathode common.
Unit 1
z Low forward voltage
Q1, Q2: VF (3) = 0.90V (typ.)
z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)
z Small total capacitance Q1, Q2: CT = 0.9pF (typ.)
Unit 2
z Low forward voltage
Q3, Q4: VF (3) = 0.92V (typ.)
z Fast reverse recovery time Q3, Q4: trr = 1.6ns (typ.)
z Small total capacitance Q3, Q4: CT = 2.2pF (typ.)
Unit 1, Unit 2 Common Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
Symbol
V_RM
V_R
I_FM
I_O
I_FSM
P
T_j
T_stg
Rating
85
80
300*
Unit
JEDEC
―
V
EIAJ
―
V
TOSHIBA
1-2T1D
Weight: 6.2mg
mA
80*
mA
2*
A
200
mW
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: This is the Absolute Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4). In the case of using Unit 1 and Unit 2
independently or simultaneously, the Absolute Maximum Ratings per diode is 75% of the single diode one.
Marking
Pin Assignment (Top View)
1
2007-11-01