HN1B04FU-GR Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application

HN1B04F
Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-Emitter Voltage
Transition frequency
Collector output capacitance
Symbol
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_{CE (sat)}
V_BE
f_T
C_ob
Test
Circuit
Test Condition
― V_CB = −35V, I_E = 0
― V_EB = −5V, I_C = 0
― V_CE = −1V, I_C = −100mA
― V_CE = −6V, I_C = −400mA
― I_C = −100mA, I_B = −10mA
― V_CE = −1V, I_C = −100mA
― V_CE = −6V, I_C = −20mA
― V_CB = −6V, I_E = 0, f = 1MHz
Min Typ. Max Unit
―
― −100 nA
―
― −100 nA
70
―
400
25
―
―
― −0.1 −0.25 V
― −0.8 −1.0 V
―
200
― MHz
―
7
―
pF
Q2 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-Emitter Voltage
Transition frequency
Collector output capacitance
Symbol
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_{CE (sat)}
V_BE
f_T
C_ob
Test
Circuit
Test Condition
― V_CB = 35V, I_E = 0
― V_EB = 5V, I_C = 0
― V_CE = 1V, I_C = 100mA
― V_CE = 6V, I_C = 400mA
― I_C = 100mA, I_B = 10mA
― V_CE = 1V, I_C = 100mA
― V_CE = 6V, I_C = 20mA
― V_CB = 6V, I_E = 0, f = 1MHz
Min Typ. Max Unit
―
―
100 nA
―
―
100 nA
70
―
400
25
―
―
―
0.1 0.25 V
―
0.8
1.0
V
―
300
― MHz
―
7
―
pF
Marking
Equivalent Circuit (Top View)
6
54
50
Q2
Q1
123
2
2007-11-22