HN1B04FU-GR Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application

HN1B04F
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
HN1B04F
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
Switching application
Q1:
z Excellent h_FE linearity
: h_FE(2) = 25 (min) at V_CE = −6V, I_C = −400mA
Q2:
z Excellent h_FE linearity
: h_FE(2) = 25 (min) at V_CE = 6V, I_C = 400mA
Unit: mm
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V_CBO
V_CEO
V_EBO
I_C
−35
−30
−5
−500
Q2 Absolute Maximum Ratings (Ta = 25°C)
1.EMITTER1 (E1)
2.BASE1
(B1)
3.COLLECTOR2 (C2)
Unit
4.EMITTER2 (E2)
5.BASE2
(B2)
V
6.COLLECTOR1 (C1)
V
JEDEC
―
V
JEITA
―
mA
TOSHIBA
2-3N1A
Weight: 0.015g (typ.)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V_CBO
V_CEO
V_EBO
I_C
35
V
30
V
5
V
500
mA
Q1,Q2 Common Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector power dissipation
Junction temperature
Storage temperature range
P_C*
300
mW
T_j
150
°C
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating. 200mW per element must be exceeded.
1
2007-11-22