HN1A26FS Datasheet, PDF (2/3 Pages) Toshiba Semiconductor – Silicon PNP Epitaxial Type (PCT Process) Frequency General-Purpose Amplifier Applications

Q1, Q2 Common
IC - VCE
-120
COMMON EMITTER　Ta = 25°C
-2.0
-100
-1.5
-1.0
-80
-0.7
-60
-0.5
-40
-0.3
-0.2
-20
IB = -0.1mA
-0
-00 -1 -2 -3 -4 -5 -6 -7
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
-1
COMMON EMITTER
IC/IB = 10
HN1A26FS
1000
hFE - IC
Ta = 100°C 25
100
-25
COMMON EMITTER
　　　VCE = −6V
　　VCE = −1V
10
-0.1
-1
-10
COLLECTOR CURRENT IC (mA)
-100
VBE(sat) - IC
-10
COMMON EMITTER
IC/IB = 10
-0.1
Ta = 100°C
-0.01
-0.1
25
-25
-1
-10
COLLECTOR CURRENT IC (mA)
-100
-1
-25
25
Ta = 100°C
-0.1
-0.1
-1
-10
-100
COLLECTOR CURRENT IC (mA)
-1000
IB - VBE
-100
Ta = 100°C
-25
-10
25
-1
-0.1
-00
COMMON EMITTER
VCE = −6V
-0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4
BASE-EMITTER VOLTAGE VBE (V)
100
90
80
70
60
50
40
30
20
10
0
0
PC - Ta
Mounted on FR4 board
　　　　　(10 mm × 10 mm × 1 mmt)
20 40 60 80 100 120 140 160 180
AMBIENT TEMPERATURE Ta (°C)
2
2007-11-01