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HN1A26FS Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Silicon PNP Epitaxial Type (PCT Process) Frequency General-Purpose Amplifier Applications | |||
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN1A26FS
HN1A26FS
Frequency General-Purpose Amplifier Applications
⢠Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package.
⢠High voltage: VCEO = â50 V
⢠High current: IC = â100 mA (max)
⢠High hFE: hFE = 120 to 400
⢠Excellent hFE linearity
: hFE (IC = â0.1 mA)/hFE (IC = â2 mA) = 0.95 (typ.)
Absolute Maximum Ratings (Ta = 25°C)
0.1±0.05
1.0±0.05
0.8±0.05
Unit: mm
0.1±0.05
1
6
2
5
3
4
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
â50
V
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
VCEO
â50
V
VEBO
â5
V
IC
â100
mA
IB
â30
mW
PC(Note 1)
50
mW
1.EMITTER1
(E1)
2.BASE1
(B1)
3.COLLECTOR2 (C2)
4.EMITTER2
(E2)
fS6 5.BASE2
(B2)
6.COLLECTOR1 (C1)
Junction temperature
Storage temperature range
Tj
150
°C
Tstg
â55 ~ 150
°C
JEDEC
â
Note:
Using continuously under heavy loads (e.g. the application of
JEITA
â
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-1F1D
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.001g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating.
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Collector cutoff current
ICBO
VCB = â50 V, IE = 0
Emitter cutoff current
IEBO
VEB = â5 V, IC = 0
DC current gain
hFE(Note) VCE = â6 V, IC = â2 mA
Collector-emitter saturation voltage
VCE (sat) IC = â100 mA, IB = â10 mA
Transition frequency
fT
VCE = â10 V, IC = â1 mA
Collector output capacitance
Cob
VCB = â10 V, IE = 0, f = 1 MHz
Note: hFE Classification Y (F): 120 ~ 140, GR (H): 200 ~ 400
( ) Marking symbol
Min Typ. Max Unit
â¯
⯠â0.1 μA
â¯
⯠â0.1 μA
120
â¯
400
â â0.18 â0.3
V
80
â¯
⯠MHz
â¯
1.6
â¯
pF
Equivalent Circuit (top view)
654
Marking
Type Name
hFE Rank
Q2
8F
Q1
12 3
1
2007-11-01
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