GT50J325_06 Datasheet, PDF (2/7 Pages) Toshiba Semiconductor – Silicon N Channel IGBT High Power Switching Applications

Electrical Characteristics (Ta = 25°C)
GT50J325
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Turn-on delay time
Rise time
Turn-on time
Switching time
Turn-off delay time
Fall time
Turn-off time
Switching loss
Turn-on switching
loss
Turn-off switching
loss
Peak forward voltage
Reverse recovery time
I_GES
I_CES
V_{GE (OFF)}
V_{CE (sat)}
C_ies
V_GE = ±20 V, V_CE = 0
V_CE = 600 V, V_GE = 0
I_C = 5 mA, V_CE = 5 V
I_C = 50 A, V_GE = 15 V
V_CE = 10 V, V_GE = 0, f = 1 MHz
⎯
⎯ ±500 nA
⎯
⎯
1.0 mA
3.5
⎯
6.5
V
⎯
2.0 2.45
V
⎯ 7900 ⎯
pF
t_{d (on)}
⎯ 0.09 ⎯
t_r
⎯ 0.07 ⎯
t_on
t_{d (off)}
t_f
t_off
E_on
E_off
Inductive load
V_CC = 300 V, I_C = 50 A
V_GG = +15 V, R_G = 13 Ω
⎯ 0.24 ⎯
μs
⎯ 0.30 ⎯
⎯ 0.05 ⎯
(Note 1)
⎯
0.43
⎯
(Note 2)
⎯ 1.30 ⎯
mJ
⎯ 1.34 ⎯
V_F
I_F = 50 A, V_GE = 0
t_rr
I_F = 50 A, di/dt = −100 A/μs
⎯
⎯
4.2
V
⎯
65
⎯
ns
Note 1: Switching time measurement circuit and input/output waveforms
−V_GE
I_C
R_G
L _VCC
V_CE
V_GE
0
90%
I_C
90%
0 ^VCE
10%
t_{d (off)}
t_f
t_off
10%
10%
90%
10%
t_{d (on)}
t_r
t_on
10%
Note 2: Switching loss measurement waveforms
V_GE
0
90%
10%
I_C
0 ^VCE
E_off
5%
E_on
2
2006-11-01