GT50J325_06 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Silicon N Channel IGBT High Power Switching Applications

GT50J325
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J325
High Power Switching Applications
Fast Switching Applications
Unit: mm
• Fourth generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
• High speed: t_f = 0.05 μs (typ.)
• Low switching loss: E_on = 1.30 mJ (typ.)
: E_off = 1.34 mJ (typ.)
• Low saturation Voltage: V_{CE (sat)} = 2.0 V (typ.)
• FRD included between emitter and collector
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Emitter-collector forward
current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
Rating
Unit
V_CES
600
V
V_GES
±20
V
I_C
50
A
I_CP
100
I_F
50
A
I_FM
100
P_C
240
W
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
Weight: 9.75 g
―
―
2-21F2C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
R_{th (j-c)}
R_{th (j-c)}
Max
0.521
2.30
Unit
°C/W
°C/W
Equivalent Circuit
Marking
Gate
Collector
Emitter
TOSHIBA
GT50J325
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-11-01