GT40T301 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT40T301
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Emitter-collector forward voltage
Reverse recovery time
Thermal resistance
Symbol
Test Condition
Min Typ. Max Unit
I_GES
I_CES
V_{GE (OFF)}
V_{CE (sat)}
C_ies
t_r
t_on
t_f
t_off
V_ECF
t_rr
R_{th (j-c)}
V_GE = ±25 V, V_CE = 0
V_CE = 1500 V, V_GE = 0
I_C = 40 mA, V_CE = 5 V
I_C = 40 A, V_GE = 15 V
V_CE = 10 V, V_GE = 0, f = 1 MHz
15 V
0
−15 V
51 Ω
600 V
I_ECF = 30 A, V_GE = 0
I_ECF = 30 A, V_GE = 0, di/dt = −20 A/µs
IGBT
Diode

 ±500 nA


1.0 mA
4.0

7.0
V

3.7
5.0
V
 2900 
pF
 0.40 
 0.45 
µs
 0.23 0.40

0.6


1.9
2.5
V

0.7
3.0
µs

 0.625
°C/W

 1.25
2
2002-01-18