GT40T301 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT40T301
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40T301
Parallel Resonance Inverter Switching Applications
Unit: mmç
• FRD included between emitter and collector
• Enhancement-mode
• High speed IGBT : tf = 0.25 µs (typ.) (IC = 40 A)
FRD : trr = 0.7 µs (typ.) (di/dt = −20 A/µs)
• Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Emitter-collector forward
current
DC
1 ms
Collector power dissipation (Tc =
25°C)
Junction temperature
Storage temperature range
Symbol
V_CES
V_GES
I_C
I_CP
I_ECF
I_ECPF
P_C
T_j
T_stg
Rating
Unit
1500
V
±25
V
40
A
80
30
A
80
200
W
150
°C
−55~150
°C
Equivalent Circuit
Collector
Gate
Emitter
JEDEC
―
JEITA
―
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
1
2002-01-18