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CRS10I30A Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type | |||
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Electrical Characteristics (Ta = 25°C)
CRS10I30A
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Peak forward voltage
VFM (1) IFM = 0.1 A (pulse test)
VFM (2) IFM = 0.7 A (pulse test)
â 0.27 â
â
0.35 0.39
V
VFM (3) IFM = 1.0 A (pulse test)
â 0.37 â
Repetitive peak reverse current
IRRM (1) VRRM = 5.0 V (pulse test)
IRRM (2) VRRM = 30 V (pulse test)
â
10
â
μA
â
20
60
Junction capacitance
Cj VR = 10 V, f = 1.0 MHz
â
50
â
pF
Device mounted on a ceramic board
board size: 50 mm à 50 mm
soldering land: 2 mm à 2 mm
â
board thickness: 0.64 mm
Thermal resistance (junction to ambient) Rth (j-a) Device mounted on a glass-epoxy board
board size: 50 mm à 50 mm
soldering land: 6 mm à 6 mm
â
board thickness: 1.6 mm
â
70
°C/W
â
140
Thermal resistance (junction to lead)
Rth (j-â)
â
â
â
20 °C/W
Marking
Abbreviation Code
SF
Part No.
CRS10I30A
Cathode dot
Cathode
Land pattern dimensions for reference only
1.2
1.2
2.8
Unit: mm
SF
Part No.(or abbreviation code)
Anode
ï¾
Cathode mark and Lot code
2
2013-11-01
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