CRS10I30A Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type

TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CRS10I30A
CRS10I30A
Secondary Rectification in Switching Regulators
Reverse-Current Protection in Mobile Devices
• Forward voltage: V_FM = 0.39 V (max) @ I_FM = 0.7 A
• Forward current (AV): I_{F (AV)} = 1.0 A
• Repetitive peak reverse voltage: V_RRM = 30 V
• Suitable for high-density board assembly due to the use of a small
surface-mount package, “S-FLAT^TM”
Unit: mm
②
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
0.9 ± 0.1
0.16
+ 0.2
①
1.6 − 0.1
Repetitive peak reverse voltage
Forward current (AV)
V_RRM
I_{F (AV)}
30
V
1.0 (Note 1) A
① ANODE
② CATHODE
Peak one-cycle surge current
I_FSM
20 (50 Hz)
A
Junction temperature
T_j
150
°C
JEDEC
―
Storage temperature
T_stg
-55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
3-2A1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.013 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ta = 51°C: Device mounted on a glass-epoxy board
Board size: 50 mm × 50 mm
Soldering size: 6 mm × 6 mm
Board thickness: 1.6 mm
Rectangular waveform (α = 180°), V_R = 15 V
Start of commercial production
2009-11
1
2013-11-01