CCS15S40 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Schottky Barrier Diode Silicon Epitaxial

CCS15S40
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T_a = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
V_RM
40
V
Average rectified current
I_O (Note 1)
1.5
A
Non-repetitive peak forward surge current
I_FSM (Note 2)
5
A
Junction temperature
T_j
125

Storage temperature
T_stg
-55 to 125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Note 2: Measured with a 10 ms pulse.
5. Electrical Characteristics (Unless otherwise specified, T_a = 25 )
Characteristics
Forward voltage
Reverse current
Total capacitance
Symbol
Test Condition
V_F(1)
V_F(2)
I_R
C_t
I_F = 1 A (Pulse test)
I_F = 1.5 A (Pulse test)
V_R = 40 V (Pulse test)
V_R = 0 V, f = 1 MHz
Min
Typ.
Max
Unit

0.40
0.45
V

0.47
0.55


0.2
mA

170

pF
6. Marking
Marking Code
7D
Fig. 6.1 Marking
Part Number
CCS15S40
7. Usage Considerations
• Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs
more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both
forward and reverse power losses of SBDs should be considered for thermal and safety design.
©2015 Toshiba Corporation
2
2015-11-13
Rev.3.0