 English |
|
|
|
|
|
|
|
| CCS15S40 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Schottky Barrier Diode Silicon Epitaxial | |||
| |||
|
Schottky Barrier Diode Silicon Epitaxial
CCS15S40
1. Applications
⢠High-Speed Switching
2. Features
(1) Small package
(2) Low forward voltage: VF(2) = 0.47 V (typ.)
3. Packaging and Internal Circuit
CST2C
CCS15S40
1: Cathode
2: Anode
©2015 Toshiba Corporation
1
Start of commercial production
2014-01
2015-11-13
Rev.3.0
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese