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| CCS15S30 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Schottky Barrier Diode Silicon Epitaxial | |||
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CCS15S30
5. Electrical Characteristics (Unless otherwise specified, Ta = 25 î)
Characteristics
Forward voltage
Forward voltage
Reverse current
Total capacitance
Symbol
Test Condition
VF(1)
VF(2)
IR
Ct
IF = 1 A (Pulse test)
IF = 1.5 A (Pulse test)
VR = 30 V (Pulse test)
VR = 0 V, f = 1 MHz
Min
Typ.
Max
Unit
î¥
0.33
0.40
V
î¥
0.39
î¥
V
î¥
0.2
0.5
mA
î¥
200
î¥
pF
6. Marking
Marking Code
74
Fig. 6.1 Marking
Part Number
CCS15S30
7. Usage Considerations
⢠Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs
more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both
forward and reverse power losses of SBDs should be considered for thermal and safety design.
©2015 Toshiba Corporation
2
2015-11-13
Rev.4.0
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