CCS15S30 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Schottky Barrier Diode Silicon Epitaxial

Schottky Barrier Diode Silicon Epitaxial
CCS15S30
1. Applications
• High-Speed Switching
2. Features
(1) Low forward voltage: V_F(1) = 0.33 V (typ.)
3. Packaging and Internal Circuit
CCS15S30
1: Cathode
2: Anode
CST2C
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T_a = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
V_RM
30
V
Reverse voltage
V_R
20
Average rectified current
I_O (Note 1)
1.5
A
Non-repetitive peak forward surge current
I_FSM (Note 2)
5
Junction temperature
T_j
125

Storage temperature
T_stg
-55 to 125
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Note 2: Measured with a 10 ms pulse.
©2015 Toshiba Corporation
1
Start of commercial production
2013-07
2015-11-13
Rev.4.0