2SK3847 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Silicon N-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applications

Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Gate leakage current
Drain cutoff current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
I_GSS
I_DSS
V _{(BR) DSS}
V _{(BR) DSX}
V_th
R_{DS (ON)}
|Y_fs|
C_iss
C_rss
C_oss
V_GS = ±16 V, V_DS = 0 V
V_DS = 40 V, V_GS = 0 V
I_D = 10 mA, V_GS = 0 V
I_D = 10 mA, V_GS = −20 V
V_DS = 10 V, I_D = 1 mA
V_GS = 4.5 V, I_D = 16 A
V_GS = 10 V, I_D = 16 A
V_DS = 10 V, I_D = 16 A
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
Rise time
t_r
Turn−on time
t_on
Switching time
Fall time
t_f
10 V
V_GS
0V
I_D = 16 A _Output
V_DD ≈ 20 V
2SK3847
Min Typ. Max Unit
—
—
±10
μA
—
— 100 μA
40
—
—
V
15
—
—
1.5
—
2.5
V
—
19
26
mΩ
—
12
16
18
36
—
S
— 1980 —
— 210 —
pF
— 300 —
—
7
—
—
22
—
ns
—
10
—
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“Miller”) charge
t_off
Duty ≤ 1%, t_w = 10 μs
Q_g
Q_gs
V_DD ≈ 32 V, V_GS = 10 V, I_D = 32 A
Q_gd
—
60
—
—
40
—
—
28
—
nC
—
12
—
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I_DR
I_DRP
V_DSF
t_rr
Qrr
Test Condition
—
—
I_DR = 32 A, V_GS = 0 V
I_DR = 32 A, V_GS = 0 V
dl_DR/dt = 50 A/μS
Min Typ. Max Unit
—
—
32
A
—
—
96
A
—
— −1.5
V
—
40
—
ns
—
24
—
nC
Marking
K3 847
Part No. (or abbreviation code)
Lot No.
A line indicates a
lead (Pb) – free package or
lead (Pb) – free finish.
2
2006-09-27