2SK3847 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applications

2SK3847
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOS III)
2SK3847
Switching Regulator, DC/DC Converter and Motor Drive
Applications
Unit: mm
z Low drain−source ON resistance : R_{DS (ON)} = 12 mΩ (typ.)
z High forward transfer admittance : |Y_fs| = 36 S (typ.)
z Low leakage current : I_DSS = 100 μA (max) (V_DS = 40 V)
z Enhancement mode : V_th = 1.5 to 2.5 V
(V_DS = 10 V, I_D = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
40
V
40
V
±20
V
32
A
96
A
30
W
47
mJ
32
A
3
mJ
150
°C
−55~150
°C
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
R_{th (ch−c)}
R_{th (ch−a)}
4.17
83.3
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = 25 V, T_ch = 25°C (initial), L = 48 μH,
R_G = 25 Ω, I_AR = 32 A
Note 3: Repetitive rating; pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
2006-09-27