2SK3475_07 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications

2SK3475
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Drain cut-off current
Gate-source leakage current
Threshold voltage
Drain-source on-voltage
Forward transconductance
Input capacitance
Output capacitance
Output power
Drain efficiency
Power gain
Low voltage output power
I_DSS
V_DS = 20 V, V_GS = 0 V
⎯
⎯
5
µA
I_GSS
V_GS = 10 V
⎯
⎯
5
µA
V_th
V_DS = 7.2 V, I_D = 2 mA
1.9 2.4 2.9
V
V_{DS (ON)} V_GS = 10 V, I_D = 75 mA
⎯
87
⎯
mV
Y_fs
V_DS = 7.2 V, I_DS = 208 mA
⎯
260
⎯
mS
C_iss
V_DS = 7.2 V, V_GS = 0 V, f = 1 MHz ⎯
11
⎯
pF
C_oss
V_DS = 7.2 V, V_GS = 0 V, f = 1 MHz
⎯
12.5
⎯
pF
P_O
V_DS = 7.2 V,
η_D
I_idle = 50 mA (V_GS = adjust),
f = 520 MHz, P_i = 20 mW,
G_P
630 ⎯
45
⎯
14.9 ⎯
⎯ mW
⎯
%
⎯
dB
V_DS = 6.0 V,
P_OL
I_idle = 50 mA (V_GS = adjust),
f = 520 MHz, P_i = 20 mW,
500 ⎯
⎯ mW
Note 2: These characteristic values are measured using measurement tools specified by Toshiba.
Output Power Test Fixture
(Test Condition: f = 520 MHz, V_DS = 7.2 V, I_idle = 50 mA, P_i = 20 mW)
C5
P_i
Z_G = 50 Ω ^{C1 C2}
L1
L3
C7
C8
R1
L4
C9
L2
C3 C4
C10
C6
P_O
Z_L = 50 Ω
V_GS
V_DS
C1: 10 pF
C2: 10 pF
C3: 9 pF
C4: 6 pF
C5: 2200 pF
C6: 2200 pF
C7: 10 µF
C8: 10000 pF
C9: 10 µF
C10: 10000 pF
L1: φ0.8 mm enamel wire, 2.2ID, 1T
L2: φ0.8 mm enamel wire, 2.2ID, 1T
L3: φ0.8 mm enamel wire, 5.5ID, 4T
L4: φ0.8 mm enamel wire, 5.5ID, 8T
R1: 1.5 kΩ
2
2007-2-19