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| 2SK3475_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications | |||
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3475
2SK3475
VHF- and UHF-band Amplifier Applications
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment.These
TOSHIBA products are neither intended nor warranted for any other
use.Do not use these TOSHIBA products listed in this document except for
high frequency Power Amplifier of telecommunications equipment.
⢠Output power: PO = 630 mW (min)
⢠Gain: GP = 14.9dB (min)
⢠Drain efficiency: ηD = 45% (min)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gain-source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature range
VDSS
20
V
VGSS
10
V
ID
1
A
PD (Note 1)
3
W
Tch
150
°C
Tstg
â45~150
°C
Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)
Marking
Part No. (or abbreviation code)
JEDEC
JEITA
TOSHIBA
Unit: mm
â
SC-62
2-5K1D
WB
Lot No.
123
1. Gate
2. Source
3. Drain
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Caution: This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
1
2007-2-19
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