2SK1544 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – N Channel MOS Type (pie -MOS III.5) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications

2SK1544
Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Gate Leakage Current
Drain Cut-off Current
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source ON Resistance
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Rise Time
Switching
Time
Turn-on Time
Fall Time
Turn-off Time
I_GSS
I_DSS
V_{(BR) DSS}
V_th
R_{DS (ON)}
Y_fs
C_iss
C_rss
C_oss
t_r
t_on
t_f
t_off
V_GS = ±25V, V_DS = 0V
V_DS = 500V, V_GS = 0V
I_D = 10mA, V_GS = 0V
V_DS = 10V, I_D = 1mA
I_D = 13A, V_GS = 10V
V_DS = 10V, I_D = 13A
V_DS = 10V, V_GS = 0V,
f = 1MHz
MIN. TYP. MAX. UNIT
–
– ±100 nA
–
–
300
µA
500
–
–
V
1.5
–
3.5
V
– 0.15 0.20
Ω
10
21
–
S
– 3700 5000
pF
–
400 750
–
920 1300
–
185 370
–
240 480
–
250 500
ns
–
590 1180
Total Gate Charge
(Gate-Source Plus Gate-Drain)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Q_g
V_DD = 400V, V_GS = 10V,
Q_gs
I_D = 25A
Q_gd
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITION
Continuous Drain Reverse Current
Pulse Drain Reverse Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovered Charge
I_DR
–
I_DRP
–
V_DSF
I_DR = 25A, V_GS = 0V
t_rr
I_DR = 25A, V_GS = 0V
Q_rr
dI_DR/dt = 100A/µs
–
150 250
nC
–
70
–
–
80
–
MIN. TYP. MAX. UNIT
–
–
25
A
–
–
100
A
–
–
-1.6
V
–
780
–
ns
–
9.8
–
µC
2/6
TOSHIBA CORPORATION