2SK1544 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – N Channel MOS Type (pie -MOS III.5) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications

TOSHIBA
Discrete Semiconductors
Field Effect Transistor
Silicon N Channel MOS Type (π-MOS III.5)
High Speed, High Current DC-DC Converter,
Relay Drive and Motor Drive Applications
Features
• Low Drain-Source ON Resistance
- R_DS(ON) = 0.15Ω (Typ.)
• High Forward Transfer Admittance
- Y_fs = 21S (Typ.)
• Low Leakage Current
- I_DSS = 300µA (Max.) @ V_DS = 500V
• Enhancement-Mode
- V_th = 1.5 ~ 3.5V @ V_DS = 10V, I_D = 1mA
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
Drain-Gate Voltage (R_GS = 20kΩ)
Gate-Source Voltage
Drain Current
DC
Pulse
Drain Power Dissipation
(Tc = 25°C)
Channel Temperature
Storage Temperature Range
V_DSS
500
V_DGR
500
V_GSS
±30
I_D
25
I_DP
100
P_D
200
T_ch
150
T_stg
-55 ~ 150
UNIT
V
V
V
A
W
°C
°C
Thermal Characteristics
CHARACTERISTIC
SYMBOL MAX. UNIT
Thermal Resistance, Channel to Case
Thermal Resistance, Channel to Ambient
R_th(ch-c)
R_th(ch-a)
0.625
35.7
°C/W
°C/W
This transistor is an electrostatic sensitive device. Please handle with care.
2SK1544
Industrial Applications Unit in mm
TOSHIBA CORPORATION
1/6