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2SK1489_09 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Chopper Regulator Applications
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
VDS = 800 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 6 A
VDS = 20 V, ID = 6 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Turn−on time
ton
Switching time
Fall time
tf
Turn−off time
Total gate charge (Gate–source
plus gate–drain)
Gate−source charge
Gate−drain (“miller”) charge
toff
Qg
Qgs
VDD ≈ 400 V, VGS = 10 V, ID = 12 A
Qgd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Symbol
IDR
IDRP
VDSF
Test Condition
—
—
IDR = 12 A, VGS = 0 V
Marking
2SK1489
Min Typ. Max Unit
—
— ±100 nA
—
— 300 μA
1000 —
—
V
1.5
—
3.5
V
—
0.8 1.0
Ω
4.0 6.0
—
S
— 2000 —
— 220 —
pF
— 360 —
— 100 —
— 140 —
ns
— 150 —
— 500 —
— 110 —
—
50
—
nC
—
60
—
Min Typ. Max Unit
—
—
12
A
—
—
36
A
—
—
−1.6
V
TOSHIBA
2SK1489
JAPAN
Note 2: A line under a Lot No. identifies the indication of product
Part No. (or abbreviation code)
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Lot No.
Note 2
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29