2SK1489_09 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Chopper Regulator Applications

2SK1489
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII^.5)
2SK1489
Chopper Regulator Applications
z Low drain−source ON resistance
: R_{DS (ON)} = 0.8 Ω (typ.)
z High forward transfer admittance
: |Y_fs| = 6.0 S (typ.)
z Low leakage current
: I_DSS = 300 μA (max) (V_DS = 800 V)
z Enhancement mode
: V_th = 1.5 to 3.5 V (V_DS = 10 V, I_D = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
T_ch
T_stg
1000
V
1000
V
±30
V
12
A
36
200
W
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch−c)}
R_{th (ch−a)}
0.625
35.7
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2009-09-29