2SK1381_04 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon N Channel MOS Type (L2−pai-MOSIII) Relay Drive, Motor Drive and DC−DC Converter

Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
I_GSS
I_DSS
V _{(BR) DSS}
V_th
R_{DS (ON)}
|Y_fs|
C_iss
C_rss
C_oss
V_GS = ±20 V, V_DS = 0 V
V_DS = 100 V, V_GS = 0 V
I_D = 10 mA, V_GS = 0 V
V_DS = 10 V, I_D = 1 mA
V_GS = 4 V, I_D = 25 A
V_GS = 10 V, I_D = 25 A
V_DS = 10 V, I_D = 25 A
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
Rise time
t_r
Turn−on time
t_on
Switching time
Fall time
t_f
Turn−off time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
t_off
Q_g
Q_gs
V_DD ≈ 80 V, V_GS = 10 V, I_D = 50 A
Q_gd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovered charge
Symbol
I_DR
I_DRP
V_DSF
t_rr
Q_rr
Test Condition
—
—
I_DR = 50 A, V_GS = 0 V
I_DR = 50 A, V_GS = 0 V
dI_DR / dt = 50 A / μs
Marking
2SK1381
Min Typ. Max Unit
—
—
±50
nA
—
—
100
μA
100
—
—
V
0.8
—
2.0
V
—
31
46
mΩ
—
25
32
20
33
—
S
— 3700 —
— 580 —
pF
— 1500 —
—
16
—
—
46
—
ns
—
60
—
— 185 —
—
88
—
—
62
—
nC
—
26
—
Min Typ. Max Unit
—
—
50
A
—
—
200
A
—
—
−1.6
V
— 280 —
ns
— 0.56 —
μC
K1381
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2004-07-06