2SK1381_04 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon N Channel MOS Type (L2−pai-MOSIII) Relay Drive, Motor Drive and DC−DC Converter

2SK1381
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L²âˆ’π−MOSIII)
2SK1381
Relay Drive, Motor Drive and DC−DC Converter
Applications
Unit: mm
4-V gate drive
Low drain−source ON resistance : R_{DS (ON)} = 25 mΩ (typ.)
High forward transfer admittance : |Y_fs| = 33 S (typ.)
Low leakage current
: I_DSS = 100 μA (max) (V_DS = 100 V)
Enhancement mode
: V_th = 0.8~2.0 V (V_DS = 10 V, I_D = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
T_ch
T_stg
100
V
100
V
±20
V
50
A
200
150
W
150
°C
−55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
R_{th (ch−c)}
R_{th (ch−a)}
0.833
50
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
1
2004-07-06