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2SK1381 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon N Channel MOS Type (L2−pai-MOSIII) Relay Drive, Motor Drive and DC−DC Converter | |||
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Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cutâoff current
Drainâsource breakdown voltage
Gate threshold voltage
Drainâsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±20 V, VDS = 0 V
VDS = 100 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 25 A
VGS = 10 V, ID = 25 A
VDS = 10 V, ID = 25 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Turnâon time
ton
Switching time
Fall time
tf
Turnâoff time
Total gate charge (Gateâsource
plus gateâdrain)
Gateâsource charge
Gateâdrain (âmillerâ) charge
toff
Qg
Qgs
VDD â 80 V, VGS = 10 V, ID = 50 A
Qgd
SourceâDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovered charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
â
â
IDR = 50 A, VGS = 0 V
IDR = 50 A, VGS = 0 V
dIDR / dt = 50 A / µs
Marking
2SK1381
Min Typ. Max Unit
â
â
±50
nA
â
â
100
µA
100
â
â
V
0.8
â
2.0
V
â
31
46
mâ¦
â
25
32
20
33
â
S
â 3700 â
â
580
â
pF
â 1500 â
â
16
â
â
46
â
ns
â
60
â
â
185
â
â
88
â
â
62
â
nC
â
26
â
Min Typ. Max Unit
â
â
50
A
â
â
200
A
â
â
â1.6
V
â
280
â
ns
â 0.56 â
µC
K1381
â»
â» Lot Number
Type
Month (starting from alphabet A)
Year (last number of the christian era)
2
2002-09-02
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