2SK1381 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon N Channel MOS Type (L2−pai-MOSIII) Relay Drive, Motor Drive and DC−DC Converter

2SK1381
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L²âˆ’π−MOSIII)
2SK1381
Relay Drive, Motor Drive and DC−DC Converter
Applications
Unit: mm
4 V gate drive
Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.)
High forward transfer admittance : |Yfs| = 33 S (typ.)
Low leakage current
: IDSS = 100 µA (max) (VDS = 100 V)
Enhancement−mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
V_DSS
100
V
Drain−gate voltage (R_GS = 20 kΩ)
V_DGR
100
V
Gate−source voltage
V_GSS
±20
V
Drain current
DC (Note 1)
I_D
Pulse (Note 1)
I_DP
50
A
200
Drain power dissipation (Tc = 25°C)
P_D
150
W
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
R_{th (ch−c)}
R_{th (ch−a)}
0.833
50
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
2002-09-02