2SK1365 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)

Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
I_GSS
I_DSS
V _{(BR) DSS}
V_th
R_{DS (ON)}
|Y_fs|
C_iss
C_rss
C_oss
V_GS = ±20 V, V_DS = 0 V
V_DS = 800 V, V_GS = 0 V
I_D = 10 mA, V_GS = 0 V
V_DS = 10 V, I_D = 1 mA
I_D = 4 A, V_GS = 10 V
V_DS = 20 V, I_D = 4 A
V_DS = 25 V, V_GS = 0 V, f = 1 MHz
Rise time
t_r
Turn−on time
t_on
Switching time
Fall time
t_f
Turn−off time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
t_off
Q_g
Q_gs
V_DD ≈ 400 V, V_GS = 10 V, I_D = 7 A
Q_gd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Symbol
I_DR
I_DRP
V_DSF
Test Condition
—
—
I_DR = 7 A, V_GS = 0 V
Marking
2SK1365
Min Typ. Max Unit
—
—
±50
nA
—
—
300
µA
1000 —
—
V
1.5
—
3.5
V
—
1.5
1.8
Ω
2.0
4.0
—
S
— 1300 —
—
100
—
pF
—
180
—
—
25
—
—
40
—
ns
—
20
—
—
100
—
—
120
—
—
70
—
nC
—
50
—
Min Typ. Max Unit
—
—
7
A
—
—
21
A
—
—
−1.9
V
K1365
※
※ Lot Number
Type
Month (starting from alphabet A)
Year (last number of the christian era)
2
2002-09-02