2SK1365 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)

2SK1365
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII^.5)
2SK1365
Switching Power Supply Applications
Unit: mm
Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.)
High forward transfer admittance : |Yfs| = 4.0 S (typ.)
Low leakage current : IDSS = 300 µA (max) (VDS = 800 V)
Enhancement−mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
V_DSS
1000
V
Drain−gate voltage (R_GS = 20 kΩ)
V_DGR
1000
V
Gate−source voltage
V_GSS
±20
V
Drain current
DC (Note 1)
I_D
Pulse (Note 1)
I_DP
7
A
21
Drain power dissipation (Tc = 25°C)
P_D
90
W
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
JEDEC
―
JEITA
―
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
R_{th (ch−c)}
R_{th (ch−a)}
1.39
°C / W
41.6
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
2002-09-02