2SK1061_07 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type High Speed Switching Applications

Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Drain-source ON voltage
Input capacitance
Reverse transfer capacitance
Output capacitance
Symbol
Test Condition
I_GSS
I_DSS
V _{(BR) DSS}
V_th
⎪Y_fs⎪
R_{DS (ON)}
V_{DS (ON)}
C_iss
C_rss
C_oss
V_GS = ±10 V, V_DS = 0
V_DS = 60 V, V_GS = 0
I_D = 1 mA, V_GS = 0
V_DS = 10 V, I_D = 1 mA
V_DS = 10 V, I_D = 50 mA
I_D = 50 mA, V_GS = 10 V
I_D = 50 mA, V_GS = 10 V
V_DS = 10 V, V_GS = 0, f = 1 MHz
Rise time
t_r
2SK1061
Min Typ. Max Unit
⎯
⎯ ±100 nA
⎯
⎯
10
μA
60
⎯
⎯
V
2
⎯
3.5
V
100 ⎯
⎯
mS
⎯
0.6 1.0
Ω
⎯
30
50
mV
⎯
55
65
pF
⎯
13
18
pF
⎯
40
50
pF
⎯
8
⎯
Turn-on time
t_on
Switching time
⎯
14
⎯
ns
Fall time
Turn-off Time
t_f
D.U. ^<= 1%
t_off
V_IN: t_r, t_f < 5 ns
(Z_out = 50 Ω)
⎯
35
⎯
⎯
75
⎯
Note: This transistor is the electrostatic sensitive device. Please handle with caution.
2
2007-11-01