2SK1061_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type High Speed Switching Applications

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1061
High Speed Switching Applications
Analog Switch Applications
Interface Applications
2SK1061
Unit: mm
• Excellent switching times: t_on = 14 ns (typ.)
• High forward transfer admittance: |Y_fs| = 100 mS (min)
• Low on resistance: R_{DS (ON)} = 0.6 Ω (typ.)
• Enhancement-mode
• Complementary to 2SJ167
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DS
60
V
Gate-source voltage
V_GSS
±20
V
DC
I_D
Drain current
Pulse
I_DP
Drain power dissipation (Ta = 25°C)
P_D
Channel temperature
T_ch
Storage temperature range
T_stg
200
mA
800
300
mW
150
°C
−55~150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-4E1E
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.13 g (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01