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2SJ681Q Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Relay Drive, DC−DC Converter and Motor Drive Applications | |||
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Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cutâoff current
Drainâsource breakdown voltage
Gate threshold voltage
Drainâsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turnâon time
Switching time
Fall time
Turnâoff time
Total gate charge (Gateâsource
plus gateâdrain)
Gateâsource charge
Gateâdrain (âmillerâ) charge
IGSS
IDSS
V (BR) DSS
V (BR) DSX
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
tr
ton
tf
toff
VGS = ±16 V, VDS = 0 V
VDS = â60 V, VGS = 0 V
ID = â10 mA, VGS = 0 V
ID = â10 mA, VGS = 20 V
VDS = â10 V, ID = â1 mA
VGS = â4 V, ID = â2.5 A
VGS = â10 V, ID = â2.5 A
VDS = â10 V, ID = â2.5 A
VDS = â10 V, VGS = 0 V, f = 1 MHz
0V
VGS
â10 V
ID = â2.5 A
Output
RL =
12 Ω
VDD â â30 V
Duty ⤠1%, tw = 10 μs
Qg
Qgs
VDD â â48 V, VGS = â10 V, ID = â5 A
Qgd
2SJ681
Min Typ. Max Unit
â
â
±10
μA
â
â â100 μA
â60 â
â
V
â35 â
â
V
â0.8 â
â2.0
V
â 0.16 0.25
Ω
â 0.12 0.17
2.5 5.0
â
S
â 700 â
â
60
â
pF
â
90
â
â
14
â
â
24
â
ns
â
14
â
â
95
â
â
15
â
â
11
â
nC
â
4
â
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
â
â
IDR = â5 A, VGS = 0 V
IDR = â5 A, VGS = 0 V
dlDR / dt = 50 A / μs
Min Typ. Max Unit
â
â
â5
A
â
â
â20
A
â
â
1.7
V
â
40
â
ns
â
32
â
nC
Marking
J681
Note 4: A line under a Lot No. identifies the indication of product
Part No. (or abbreviation code)
Labels.
Lot No.
Note 4
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2010-03-01
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