2SJ681Q Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Relay Drive, DC−DC Converter and Motor Drive Applications

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOSIII)
2SJ681
2SJ681
Relay Drive, DC−DC Converter and Motor Drive
Applications
z 4-V gate drive
z Low drain-source ON-resistance: R_{DS (ON)} = 0.12 Ω (typ.)
(V_GS = −10 V)
z High forward transfer admittance: |Y_fs| = 5.0 S (typ.)
z Low leakage current: I_DSS = −100 μA (max) (V_DS = −60 V)
z Enhancement mode: V_th = −0.8 to −2.0 V (V_DS = −10 V, I_D = −1 mA)
6.5 ± 0.2
5.2 ± 0.2
Unit: mm
0.6 MAX.
0.9
1.1 ± 0.2
0.6 MAX.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse(Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalenche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
−60
V
−60
V
±20
V
−5
A
−20
A
20
W
40.5
mJ
−5
A
2
mJ
150
°C
−55 to 150
°C
2.3 2.3
123
0.8 MAX.
1.1 MAX.
0.6 ± 0.15
0.6 ± 0.15
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURCE
2
1
3
JEDEC
―
JEITA
―
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch−c)}
R_{th (ch−a)}
6.25
°C / W
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = −25 V, T_ch = 25°C (initial), L = 2.2 mH, R_G = 25 Ω, I_AR = −5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2010-03-01