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2SJ681 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII) | |||
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Electrical Characteristics (Ta = 25°C)
2SJ681
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cutâoff current
Drainâsource breakdown voltage
Gate threshold voltage
Drainâsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turnâon time
Switching time
Fall time
Turnâoff time
Total gate charge (Gateâsource
plus gateâdrain)
Gateâsource charge
Gateâdrain (âmillerâ) charge
IGSS
IDSS
V (BR) DSS
V (BR) DSX
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
tr
ton
tf
toff
VGS = ±16 V, VDS = 0 V
VDS = â60 V, VGS = 0 V
ID = â10 mA, VGS = 0 V
ID = â10 mA, VGS = 20 V
VDS = â10 V, ID = â1 mA
VGS = â4 V, ID = â2.5 A
VGS = â10 V, ID = â2.5 A
VDS = â10 V, ID = â2.5 A
VDS = â10 V, VGS = 0 V, f = 1 MHz
0V
VGS
â10 V
ID = â2.5 A
Output
RL =
12 â¦
VDD â¼â â30 V
Duty <= 1%, tw = 10 µs
Qg
Qgs
VDD â â48 V, VGS = â10 V, ID = â5 A
Qgd
Min Typ. Max Unit
â
â ±10 µA
â
â â100 µA
â60 â
â
V
â35 â
â
V
â0.8 â â2.0
V
â 0.16 0.25
â¦
â 0.12 0.17
2.5
5.0
â
S
â 700 â
â
60
â
pF
â
90
â
â
14
â
â
24
â
ns
â
14
â
â
95
â
â
15
â
â
11
â
nC
â
4
â
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
â
â
IDR = â5 A, VGS = 0 V
IDR = â5 A, VGS = 0 V
dlDR / dt = 50 A / µS
Min Typ. Max Unit
â
â
â5
A
â
â â20
A
â
â
1.7
V
â
40
â
ns
â
32
â
nC
Marking
J681
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-06-30
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