2SJ681 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
2SJ681
2SJ681
Relay Drive, DC−DC Converter and Motor Drive
Applications
z 4-V gate drive
z Low drain−source ON resistance: RDS (ON) = 0.12 Ω (typ.)
z High forward transfer admittance: |Yfs| = 5.0 S (typ.)
z Low leakage current: IDSS = −100 µA (max) (VDS = −60 V)
z Enhancement mode: Vth = −0.8 to −2.0 V
(VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse(Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalenche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
−60
V
−60
V
±20
V
−5
A
−20
A
20
W
40.5
mJ
−5
A
2
mJ
150
°C
−55~150
°C
６．５±０．２
５．２±０．２
Unit: mm
０．６ MAX．
０．９
２．３ ２．３
１．１±０．２
０．６ MAX
１２３
０．８ MAX．
１．1 MAX．
０．６±０．１５
０．６±０．１５
JEDEC
―
JEITA
―
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
R_{th (ch−c)}
R_{th (ch−a)}
6.25
°C / W
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: V_DD = −25 V, T_ch = 25°C (initial), L = 2.2 mH,
R_G = 25 Ω, I_AR = −5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2006-06-30