2SJ668 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Silicon P-Channel MOS Type Relay Drive, DC/DC Converter and Motor Drive Applications

Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Gate leakage current
Drain cutoff current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn−on time
Switching time
Fall time
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“Miller”) charge
I_GSS
I_DSS
V _{(BR) DSS}
V _{(BR) DSX}
V_th
R_{DS (ON)}
|Y_fs|
C_iss
C_rss
C_oss
t_r
t_on
t_f
t_off
V_GS = ±16 V, V_DS = 0 V
V_DS = −60 V, V_GS = 0 V
I_D = −10 mA, V_GS = 0 V
I_D = −10 mA, V_GS = 20 V
V_DS = −10 V, I_D = −1 mA
V_GS = −4 V, I_D = −2.5 A
V_GS = −10 V, I_D = −2.5 A
V_DS = −10 V, I_D = −2.5 A
V_DS = −10 V, V_GS = 0 V, f = 1 MHz
0V
V_GS
−10 V
I_D = −2.5 A
Output
R_L =
12 Ω
V_DD ∼− −30 V
Duty ^<= 1%, t_w = 10 μs
Q_g
Q_gs
V_DD ≈ −48 V, V_GS = −10 V, I_D = −5 A
Q_gd
2SJ668
Min Typ. Max Unit
—
—
±10
μA
—
— −100 μA
−60 —
—
V
−35 —
—
V
−0.8 —
−2.0
V
— 0.16 0.25
Ω
— 0.12 0.17
2.5 5.0
—
S
— 700 —
—
60
—
pF
—
90
—
—
14
—
—
24
—
ns
—
14
—
—
95
—
—
15
—
—
11
—
nC
—
4
—
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I_DR
I_DRP
V_DSF
t_rr
Qrr
Test Condition
—
—
I_DR = −5 A, V_GS = 0 V
I_DR = −5 A, V_GS = 0 V
dl_DR / dt = 50 A / μS
Min Typ. Max Unit
—
—
−5
A
—
—
−20
A
—
—
1.7
V
—
40
—
ns
—
32
—
nC
Marking
J668
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-17