2SJ668 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon P-Channel MOS Type Relay Drive, DC/DC Converter and Motor Drive Applications

2SJ668
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOSIII)
2SJ668
Relay Drive, DC/DC Converter and Motor Drive
Applications
z 4 V gate drive
z Low drain−source ON-resistance: R_{DS (ON)} = 0.12 Ω (typ.)
z High forward transfer admittance: |Y_fs| = 5.0 S (typ.)
z Low leakage current: I_DSS = −100 μA (max) (V_DS = −60 V)
z Enhancement mode: V_th = −0.8 to −2.0 V (V_DS = −10 V, I_D = −1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse(Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
−60
V
−60
V
±20
V
−5
A
−20
A
20
W
40.5
mJ
−5
A
2
mJ
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
R_{th (ch−c)}
R_{th (ch−a)}
6.25
°C / W
125
°C / W
JEDEC
JEITA
―
SC-64
Note 1: Ensure that the channel temperature does not exceed 150°C.
TOSHIBA
2-7J1B
Note 2: V_DD = −25 V, T_ch = 25°C (initial), L = 2.2 mH, R_G = 25 Ω,
I_AR = −5 A
Weight: 0.35 g (typ.)
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-11-17