2SD1140_06 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process) (Darlington Power Transistor)

Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_FE
V_{CE (sat)}
V_{BE (sat)}
V_CB = 30 V, I_E = 0
V_EB = 10 V, I_C = 0
I_C = 10 mA, I_B = 0
V_CE = 2 V, I_C = 150 mA
I_C = 1 A, I_B = 1 mA
I_C = 1 A, I_B = 1 mA
2SD1140
Min Typ. Max Unit
―
―
10
μA
―
―
10
μA
30
―
―
V
4000 ―
―
―
1.5
V
―
2.2
V
Turn-on time
t_on
20 μs
Input
Output
―
0.2
―
Switching time Storage time
Fall time
Marking
t_stg
V_CC = 15 V
t_f
I_B1 = −I_B2 = 1 mA, duty cycle ≤ 1%
―
0.6
―
μs
―
0.3
―
D1140
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-21